Large‐band‐gap SiC, III‐V nitride, and II‐VI ZnSe‐based semiconductor device technologies (Q55878168)
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| Language | Label | Description | Also known as |
|---|---|---|---|
| English | Large‐band‐gap SiC, III‐V nitride, and II‐VI ZnSe‐based semiconductor device technologies |
No description defined |
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Large‐band‐gap SiC, III‐V nitride, and II‐VI ZnSe‐based semiconductor device technologies (English)
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August 1994
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76
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3
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1363-1398
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