Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer (Q56286598)
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| Language | Label | Description | Also known as |
|---|---|---|---|
| English | Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer |
No description defined |
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Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer (English)
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3 February 1986
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48
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5
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353-355
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