Electronic structures and transport properties of a MoS2-NbS2 nanoribbon lateral heterostructure (Q48052167)

8 February 2018

title

Electronic structures and transport properties of a MoS2-NbS2 nanoribbon lateral heterostructure (English)

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8 February 2018

Jiangling Pan

2

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Zhixiong Yang

object named as

Zhixiong Yang

1

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author name string

Qi Liu

3

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8 February 2018

Nannan Wu

4

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8 February 2018

Mengli Hu

5

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8 February 2018

Fangping Ouyang

6

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8 February 2018

language of work or name

English

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publication date

14 December 2016

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8 February 2018

Physical Chemistry Chemical Physics

number of pages

8

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based on heuristic

inferred from page(s)

published in

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8 February 2018

volume

19

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issue

2

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page(s)

1303-1310

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8 February 2018

Van der Waals heterostructures

cites work

1 reference

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Electronic Properties of MoS2-WS2 Heterostructures Synthesized with Two-Step Lateral Epitaxial Strategy.

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Tuning the hydrogen evolution activity of MS2 (M = Mo or Nb) monolayers by strain engineering.

21 January 2018

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Monolayer MoS2 Bandgap Modulation by Dielectric Environments and Tunable Bandgap Transistors

21 January 2018

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Dielectric screening of excitons and trions in single-layer MoS2.

21 January 2018

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Electronic properties of MoS2/MoOx interfaces: Implications in Tunnel Field Effect Transistors and Hole Contacts

21 January 2018

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MoS2Nanoribbons: High Stability and Unusual Electronic and Magnetic Properties

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21 January 2018

Identifiers

DOI

10.1039/C6CP07327A

1 reference

8 February 2018

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8 February 2018