Electrical contacts to two-dimensional semiconductors (Q38638927)

5 September 2017

Electrical contacts to two-dimensional semiconductors (English)

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5 September 2017

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3

Kaustav Banerjee

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author name string

Adrien Allain

1

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5 September 2017

Jiahao Kang

2

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5 September 2017

Kaustav Banerjee

3

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5 September 2017

Andras Kis

4

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5 September 2017

language of work or name

English

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publication date

1 November 2015

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5 September 2017

11

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inferred from page(s)

published in

Nature Materials

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5 September 2017

14

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5 September 2017

12

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5 September 2017

1195-1205

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https://scigraph.springernature.com/pub.10.1038/nmat4452

5 September 2017

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cites work

Helical microtubules of graphitic carbon

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Electric Field Effect in Atomically Thin Carbon Films

21 January 2018

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High-performance single layered WSe₂ p-FETs with chemically doped contacts

21 January 2018

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Role of metal contacts in designing high-performance monolayer n-type WSe2 field effect transistors

21 January 2018

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A subthermionic tunnel field-effect transistor with an atomically thin channel.

21 January 2018

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Emerging photoluminescence in monolayer MoS2.

21 January 2018

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Atomically Thin MoS 2 : A New Direct-Gap Semiconductor

21 January 2018

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Two-dimensional nanosheets produced by liquid exfoliation of layered materials

21 January 2018

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How good can monolayer MoS₂ transistors be?

21 January 2018

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MoS₂ field-effect transistor for next-generation label-free biosensors

21 January 2018

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Experimental demonstration of continuous electronic structure tuning via strain in atomically thin MoS2.

21 January 2018

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Bandgap engineering of strained monolayer and bilayer MoS2.

21 January 2018

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Local strain engineering in atomically thin MoS2.

21 January 2018

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Stretching and breaking of ultrathin MoS2.

21 January 2018

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Van der Waals heterostructures

21 January 2018

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Electrical detection of charge-current-induced spin polarization due to spin-momentum locking in Bi2Se3.

21 January 2018

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Silicene field-effect transistors operating at room temperature

21 January 2018

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Ultrasensitive photodetectors based on monolayer MoS2

21 January 2018

1 reference

MoS2 transistors operating at gigahertz frequencies

21 January 2018

1 reference

High performance multilayer MoS2 transistors with scandium contacts

21 January 2018

1 reference

Statistical study of deep submicron dual-gated field-effect transistors on monolayer chemical vapor deposition molybdenum disulfide films

21 January 2018

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2D crystal semiconductors: Intimate contacts

21 January 2018

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Determination of work function of graphene under a metal electrode and its role in contact resistance.

21 January 2018

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One-dimensional electrical contact to a two-dimensional material

21 January 2018

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What does annealing do to metal-graphene contacts?

21 January 2018

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Phase-engineered low-resistance contacts for ultrathin MoS2 transistors.

21 January 2018

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Nanowire transistors: room for manoeuvre

21 January 2018

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Electrical contacts to one- and two-dimensional nanomaterials

21 January 2018

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Control of Schottky barriers in single layer MoS2 transistors with ferromagnetic contacts

21 January 2018

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Controllable Schottky barriers between MoS2 and permalloy

21 January 2018

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Study on the resistance distribution at the contact between molybdenum disulfide and metals.

21 January 2018

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Mobility engineering and a metal-insulator transition in monolayer MoS₂.

21 January 2018

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Phosphorene: an unexplored 2D semiconductor with a high hole mobility

21 January 2018

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Barrier inhomogeneities at vertically stacked graphene-based heterostructures

21 January 2018

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Low resistance metal contacts to MoS2 devices with nickel-etched-graphene electrodes.

21 January 2018

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MoS₂ P-type transistors and diodes enabled by high work function MoOx contacts

21 January 2018

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Optoelectronic devices based on electrically tunable p-n diodes in a monolayer dichalcogenide.

21 January 2018

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Electroluminescence and photocurrent generation from atomically sharp WSe2/MoS2 heterojunction p-n diodes.

21 January 2018

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Atomically thin p-n junctions with van der Waals heterointerfaces.

21 January 2018

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The origins and limits of metal-graphene junction resistance.

21 January 2018

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Switching mechanism in single-layer molybdenum disulfide transistors: an insight into current flow across Schottky barriers.

21 January 2018

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Intrinsic electronic transport properties of high-quality monolayer and bilayer MoS2.

21 January 2018

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Air-stable surface charge transfer doping of MoS₂ by benzyl viologen

21 January 2018

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Multi-terminal transport measurements of MoS2 using a van der Waals heterostructure device platform.

21 January 2018

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Impact of Contact on the Operation and Performance of Back-Gated Monolayer MoS2 Field-Effect-Transistors

21 January 2018

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Electrical transport properties of single-layer WS2.

21 January 2018

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Nonvolatile memory cells based on MoS2/graphene heterostructures

21 January 2018

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Graphene/MoS2 hybrid technology for large-scale two-dimensional electronics.

21 January 2018

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Coupled Spin and Valley Physics in Monolayers of MoS 2 and Other Group-VI Dichalcogenides

21 January 2018

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Electric control of spin in monolayer WSe₂ field effect transistors.

21 January 2018

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Giant Magnetoresistance of (001)Fe/(001)Cr Magnetic Superlattices

21 January 2018

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Tunneling spin injection into single layer graphene.

21 January 2018

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Electronic spin transport and spin precession in single graphene layers at room temperature

21 January 2018

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Air stable p-doping of WSe2 by covalent functionalization

21 January 2018

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Degenerate n-doping of few-layer transition metal dichalcogenides by potassium

21 January 2018

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Functionalization of transition metal dichalcogenides with metallic nanoparticles: implications for doping and gas-sensing

21 January 2018

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Exciton valley relaxation in a single layer ofWS2measured by ultrafast spectroscopy

21 January 2018

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Many-body effects in valleytronics: direct measurement of valley lifetimes in single-layer MoS2.

21 January 2018

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Valley and spin dynamics in MoSe2 two-dimensional crystals.

21 January 2018

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Device perspective for black phosphorus field-effect transistors: contact resistance, ambipolar behavior, and scaling.

21 January 2018

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Thickness Scaling Effect on Interfacial Barrier and Electrical Contact to Two-Dimensional MoS2 Layers

21 January 2018

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Breakdown of High-Performance Monolayer MoS2 Transistors

21 January 2018

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Electron and Hole Mobilities in Single-Layer WSe2

21 January 2018

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Laterally inhomogeneous surface-potential distribution and photovoltage at clustered In/WSe2(0001) interfaces

21 January 2018

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12 December 2020

Chloride molecular doping technique on 2D materials: WS2 and MoS2

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12 December 2020

Channel length scaling of MoS2 MOSFETs

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12 December 2020

Understanding the electrical impact of edge contacts in few-layer graphene

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12 December 2020

Cu and Ag deposition on layered p-type WSe2: Approaching the Schottky limit

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12 December 2020

Defect-dominated doping and contact resistance in MoS2

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12 December 2020

Valleytronics. The valley Hall effect in MoS₂ transistors

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12 December 2020

Atomic mechanism of the semiconducting-to-metallic phase transition in single-layered MoS2.

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12 December 2020

The unusual mechanism of partial Fermi level pinning at metal-MoS2 interfaces

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12 December 2020

Single-layer MoS2 transistors

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12 December 2020

Black phosphorus field-effect transistors

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12 December 2020

Highly flexible and transparent multilayer MoS2 transistors with graphene electrodes

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12 December 2020

Designing electrical contacts to MoS2 monolayers: a computational study

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12 December 2020

Chemical doping and electron-hole conduction asymmetry in graphene devices

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12 December 2020

Hole contacts on transition metal dichalcogenides: interface chemistry and band alignments

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12 December 2020

Graphene adhesion on MoS2 monolayer: An ab initio study

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12 December 2020

High-performance molybdenum disulfide field-effect transistors with spin tunnel contacts

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12 December 2020

High Mobility WSe2 p- and n-Type Field-Effect Transistors Contacted by Highly Doped Graphene for Low-Resistance Contacts

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12 December 2020

Schottky-barrier formation on a covalent semiconductor without Fermi-level pinning: The metal-MoS2(0001) interface

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12 December 2020

Semiconductor nanowire devices

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7 January 2021

First-principles analysis of MoS2/Ti2C and MoS2/Ti2CY2(Y=Fand OH) all-2D semiconductor/metal contacts

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7 January 2021

Transmission through a boundary between monolayer and bilayer graphene

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7 January 2021

Fundamental obstacle for electrical spin injection from a ferromagnetic metal into a diffusive semiconductor

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7 January 2021

Valley dynamics probed through charged and neutral exciton emission in monolayerWSe2

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7 January 2021

Identifiers

DOI

10.1038/NMAT4452

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Dimensions Publication ID

5 September 2017

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