Dimer-adatom-stacking-fault (DAS) and non-DAS (111) semiconductor surfaces: A comparison of Ge(111)-c(2 x 8) to Si(111)-(2 x 2), -(5 x 5), -(7 x 7), and -(9 x 9) with scanning tunneling microscopy (Q78013052)
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scientific article published on 01 January 1989
| Language | Label | Description | Also known as |
|---|---|---|---|
| English | Dimer-adatom-stacking-fault (DAS) and non-DAS (111) semiconductor surfaces: A comparison of Ge(111)-c(2 x 8) to Si(111)-(2 x 2), -(5 x 5), -(7 x 7), and -(9 x 9) with scanning tunneling microscopy |
scientific article published on 01 January 1989 |
Statements
Dimer-adatom-stacking-fault (DAS) and non-DAS (111) semiconductor surfaces: A comparison of Ge(111)-c(2 x 8) to Si(111)-(2 x 2), -(5 x 5), -(7 x 7), and -(9 x 9) with scanning tunneling microscopy (English)
Becker RS
Vickers JS
1 January 1989