Theory of Zn-enhanced disordering in GaAs/AlAs superlattices (Q74519278)

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11 November 2019

title

Theory of Zn-enhanced disordering in GaAs/AlAs superlattices (English)

1 reference

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11 November 2019

author name string

Wang C

series ordinal

1

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11 November 2019

Zhang Q

series ordinal

2

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11 November 2019

Bernholc J

series ordinal

3

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11 November 2019

language of work or name

English

0 references

publication date

1 December 1992

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11 November 2019

published in

Physical Review Letters

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11 November 2019

volume

69

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11 November 2019

issue

26

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11 November 2019

page(s)

3789-3792

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Unified Approach for Molecular Dynamics and Density-Functional Theory

11 November 2019

cites work

1 reference

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Pseudopotentials that work: From H to Pu

21 January 2018

1 reference

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Analysis of separable potentials

21 January 2018

1 reference

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Role of metal d states in II-VI semiconductors

21 January 2018

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Role of native defects in wide-band-gap semiconductors

21 January 2018

1 reference

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Chemical potential dependence of defect formation energies in GaAs: Application to Ga self-diffusion

21 January 2018

1 reference

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Theoretical evidence for an optically inducible structural transition of the isolated As antisite in GaAs: Identification and explanation of EL2?

21 January 2018

1 reference

https://api.crossref.org/works/10.1103%2FPHYSREVLETT.69.3789

Metastability of the isolated arsenic-antisite defect in GaAs

21 January 2018

1 reference

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Mechanisms of dopant impurity diffusion in silicon

21 January 2018

1 reference

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10.1103/PHYSREVLETT.69.3789

21 January 2018

Identifiers

DOI

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11 November 2019

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