Step-bunching in SiC epitaxy: anisotropy and influence of growth temperature (Q62570286)
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article by M Syväjärvi et al published March 2002 in Journal of Crystal Growth
| Language | Label | Description | Also known as |
|---|---|---|---|
| English | Step-bunching in SiC epitaxy: anisotropy and influence of growth temperature |
article by M Syväjärvi et al published March 2002 in Journal of Crystal Growth |
Statements
Step-bunching in SiC epitaxy: anisotropy and influence of growth temperature (English)
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March 2002
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236
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1-3
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297-304
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1 reference
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