High-mobility and low-power thin-film transistors based on multilayer MoS2 crystals (Q61207382)

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11 February 2020

title

High-mobility and low-power thin-film transistors based on multilayer MoS2 crystals (English)

1 reference

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11 February 2020

1 reference

Sunkook Kim

1

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11 February 2020

Aniruddha Konar

2

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11 February 2020

Wan-Sik Hwang

3

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11 February 2020

Jong Hak Lee

4

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11 February 2020

Jiyoul Lee

5

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11 February 2020

Jaehyun Yang

6

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11 February 2020

Changhoon Jung

7

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11 February 2020

Hyoungsub Kim

8

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11 February 2020

Ji-Beom Yoo

9

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11 February 2020

Jae-Young Choi

10

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11 February 2020

Yong Wan Jin

11

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11 February 2020

Sang Yoon Lee

12

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11 February 2020

Debdeep Jena

13

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11 February 2020

Woong Choi

14

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11 February 2020

Kinam Kim

15

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11 February 2020

language of work or name

English

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publication date

1 January 2012

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11 February 2020

published in

Nature Communications

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11 February 2020

volume

3

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11 February 2020

issue

1

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page(s)

1011

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https://scigraph.springernature.com/pub.10.1038/ncomms2018

11 February 2020

exact match

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cites work

Current saturation in zero-bandgap, top-gated graphene field-effect transistors

1 reference

12 December 2020

Electronic structure of MoSe2, MoS2, and WSe2. I. Band-structure calculations and photoelectron spectroscopy

1 reference

12 December 2020

Anomalous lattice vibrations of single- and few-layer MoS2

1 reference

12 December 2020

Single-layer MoS2 transistors

1 reference

12 December 2020

Large area and structured epitaxial graphene produced by confinement controlled sublimation of silicon carbide

1 reference

12 December 2020

Atomically Thin MoS 2 : A New Direct-Gap Semiconductor

1 reference

12 December 2020

Enhancement of carrier mobility in semiconductor nanostructures by dielectric engineering.

1 reference

12 December 2020

Ambipolar MoS2 thin flake transistors

1 reference

12 December 2020

Two-dimensional atomic crystals

1 reference

12 December 2020

Present status of amorphous In-Ga-Zn-O thin-film transistors

1 reference

Crossref

https://api.crossref.org/works/10.1038%2FNCOMMS2018

7 January 2021

inferred from DOI database lookup

The transition metal dichalcogenides discussion and interpretation of the observed optical, electrical and structural properties

1 reference

Crossref

https://api.crossref.org/works/10.1038%2FNCOMMS2018

7 January 2021

inferred from DOI database lookup

Ballistic metal‐oxide‐semiconductor field effect transistor

1 reference

Crossref

https://api.crossref.org/works/10.1038%2FNCOMMS2018

7 January 2021

inferred from DOI database lookup

Identifiers

DOI

10.1038/NCOMMS2018

1 reference

https://www.ebi.ac.uk/europepmc/webservices/rest/search?query=EXT_ID:22910357%20AND%20SRC:MED&resulttype=core&format=json

Dimensions Publication ID

11 February 2020

ADS bibcode

2012NatCo...3.1011K

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