Controlled shallow single-ion implantation in silicon using an active substrate for sub-20‐keV ions (Q59423068)
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article by D. N. Jamieson et al published 16 May 2005 in Applied Physics Letters
| Language | Label | Description | Also known as |
|---|---|---|---|
| English | Controlled shallow single-ion implantation in silicon using an active substrate for sub-20‐keV ions |
article by D. N. Jamieson et al published 16 May 2005 in Applied Physics Letters |
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Controlled shallow single-ion implantation in silicon using an active substrate for sub-20‐keV ions (English)
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16 May 2005
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86
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20
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202101
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