Thickness and strain effects on electronic structures of transition metal dichalcogenides: 2H-MX2semiconductors (M=Mo, W;X=S, Se, Te) (Q56028095)
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scholarly article in Physical Review B, vol. 85 no. 3, January 2012
| Language | Label | Description | Also known as |
|---|---|---|---|
| English | Thickness and strain effects on electronic structures of transition metal dichalcogenides: 2H-MX2semiconductors (M=Mo, W;X=S, Se, Te) |
scholarly article in Physical Review B, vol. 85 no. 3, January 2012 |
Statements
Thickness and strain effects on electronic structures of transition metal dichalcogenides: 2H-MX2semiconductors (M=Mo, W;X=S, Se, Te) (English)
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17 January 2012
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85
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3
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