Biased bilayer graphene: semiconductor with a gap tunable by the electric field effect. (Q53033226)
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scientific article published on 20 November 2007
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English | Biased bilayer graphene: semiconductor with a gap tunable by the electric field effect. |
scientific article published on 20 November 2007 |
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Biased bilayer graphene: semiconductor with a gap tunable by the electric field effect. (English)
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N M R Peres
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A K Geim
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K S Novoselov
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S V Morozov
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20 November 2007
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216802
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