Self-screened high performance multi-layer MoS₂ transistor formed by using a bottom graphene electrode. (Q51659656)
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scientific article published on 4 November 2015
| Language | Label | Description | Also known as |
|---|---|---|---|
| English | Self-screened high performance multi-layer MoS₂ transistor formed by using a bottom graphene electrode. |
scientific article published on 4 November 2015 |
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Self-screened high performance multi-layer MoS₂ transistor formed by using a bottom graphene electrode. (English)
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Deshun Qu
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Xiaochi Liu
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Faisal Ahmed
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Daeyeong Lee
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Won Jong Yoo
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4 November 2015
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7
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19273-19281
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45
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