Highly air-stable phosphorus-doped n-type graphene field-effect transistors. (Q50943154)
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scientific article published on 7 August 2012
| Language | Label | Description | Also known as |
|---|---|---|---|
| English | Highly air-stable phosphorus-doped n-type graphene field-effect transistors. |
scientific article published on 7 August 2012 |
Statements
Highly air-stable phosphorus-doped n-type graphene field-effect transistors (English)
Jangah Kim
Keunsik Lee
Yeoheung Yoon
Saemi Lee
Taesung Kim
Hyoyoung Lee
7 August 2012
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