Fabrication of single- and multilayer MoS2 film-based field-effect transistors for sensing NO at room temperature. (Q48220957)
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scientific article published on 20 October 2011
| Language | Label | Description | Also known as |
|---|---|---|---|
| English | Fabrication of single- and multilayer MoS2 film-based field-effect transistors for sensing NO at room temperature. |
scientific article published on 20 October 2011 |
Statements
Fabrication of single- and multilayer MoS2 film-based field-effect transistors for sensing NO at room temperature (English)
Hai Li
Hong Li
Xiao Huang
Derrick Wen Hui Fam
Alfred Iing Yoong Tok
Qing Zhang
20 October 2011