Large-area, transparent, and flexible infrared photodetector fabricated using P-N junctions formed by N-doping chemical vapor deposition grown graphene. (Q45955700)
Jump to navigation
Jump to search
scientific article published on 19 June 2014
| Language | Label | Description | Also known as |
|---|---|---|---|
| English | Large-area, transparent, and flexible infrared photodetector fabricated using P-N junctions formed by N-doping chemical vapor deposition grown graphene. |
scientific article published on 19 June 2014 |
Statements
1 reference
Large-area, transparent, and flexible infrared photodetector fabricated using P-N junctions formed by N-doping chemical vapor deposition grown graphene. (English)
1 reference
Zhenan Bao
1 reference
Jeffrey B-H Tok
1 reference
He Tian
1 reference
Gregor Schwartz
1 reference
Tian-Ling Ren
1 reference
Nan Liu
1 reference
19 June 2014
1 reference
1 reference
14
1 reference
3702-3708
1 reference
7
1 reference
Identifiers
1 reference
1 reference