Highly Stable and Tunable Chemical Doping of Multilayer WS2 Field Effect Transistor: Reduction in Contact Resistance. (Q38956932)
Jump to navigation
Jump to search
scientific article published on 5 October 2015
Language | Label | Description | Also known as |
---|---|---|---|
English | Highly Stable and Tunable Chemical Doping of Multilayer WS2 Field Effect Transistor: Reduction in Contact Resistance. |
scientific article published on 5 October 2015 |
Statements
Highly Stable and Tunable Chemical Doping of Multilayer WS2 Field Effect Transistor: Reduction in Contact Resistance (English)
Hafiz M W Khalil
Jonghwa Eom
13 October 2015