High photosensitivity few-layered MoSe2 back-gated field-effect phototransistors. (Q35228515)
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scientific article
| Language | Label | Description | Also known as |
|---|---|---|---|
| English | High photosensitivity few-layered MoSe2 back-gated field-effect phototransistors. |
scientific article |
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High photosensitivity few-layered MoSe2 back-gated field-effect phototransistors (English)
P J Ko
T V Thu
S Ishizawa
T Takamura
1 September 2014