Design rules for phase-change materials in data storage applications (Q33863926)

29 July 2017

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title

Design rules for phase-change materials in data storage applications (English)

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29 July 2017

Martin Salinga

2

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Matthias Wuttig

object named as

Matthias Wuttig

series ordinal

3

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author name string

Dominic Lencer

series ordinal

1

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PubMed ID

21469218

29 July 2017

language of work or name

English

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publication date

5 April 2011

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29 July 2017

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29 July 2017

23

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29 July 2017

18

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29 July 2017

2030-2058

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Reversible Electrical Switching Phenomena in Disordered Structures

29 July 2017

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https://api.crossref.org/works/10.1002%2FADMA.201004255

A map for phase-change materials

21 January 2018

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https://api.crossref.org/works/10.1002%2FADMA.201004255

Extremely long period-stacking structure in the Sb-Te binary system.

21 January 2018

1 reference

https://api.crossref.org/works/10.1002%2FADMA.201004255

Structure of phase change materials for data storage.

21 January 2018

1 reference

https://api.crossref.org/works/10.1002%2FADMA.201004255

Understanding the phase-change mechanism of rewritable optical media.

21 January 2018

1 reference

https://api.crossref.org/works/10.1002%2FADMA.201004255

First-principles indicators of metallicity and cation off-centricity in the IV-VI rocksalt chalcogenides of divalent Ge, Sn, and Pb

21 January 2018

1 reference

https://api.crossref.org/works/10.1002%2FADMA.201004255

Phase-change materials for rewriteable data storage

21 January 2018

1 reference

https://api.crossref.org/works/10.1002%2FADMA.201004255

Resonant bonding in crystalline phase-change materials.

21 January 2018

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https://api.crossref.org/works/10.1002%2FADMA.201004255

Microscopic origin of the fast crystallization ability of Ge-Sb-Te phase-change memory materials

21 January 2018

1 reference

https://api.crossref.org/works/10.1002%2FADMA.201004255

Signature of tetrahedral Ge in the Raman spectrum of amorphous phase-change materials.

21 January 2018

1 reference

https://api.crossref.org/works/10.1002%2FADMA.201004255

Disorder-induced localization in crystalline phase-change materials.

21 January 2018

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https://api.crossref.org/works/10.1002%2FADMA.201004255

Low-cost and nanoscale non-volatile memory concept for future silicon chips

21 January 2018

1 reference

https://api.crossref.org/works/10.1002%2FADMA.201004255

Relaxation in glassforming liquids and amorphous solids

21 January 2018

1 reference

https://api.crossref.org/works/10.1002%2FADMA.201004255

Topology of covalent non-crystalline solids I: Short-range order in chalcogenide alloys

21 January 2018

1 reference

https://api.crossref.org/works/10.1002%2FADMA.201004255

Application of bond constraint theory to the switchable optical memory material Ge2Sb2Te5.

21 January 2018

1 reference

https://api.crossref.org/works/10.1002%2FADMA.201004255

Observation of the role of subcritical nuclei in crystallization of a glassy solid

21 January 2018

1 reference

https://api.crossref.org/works/10.1002%2FADMA.201004255

Initial structure memory of pressure-induced changes in the phase-change memory alloy Ge2Sb2Te5.

21 January 2018

1 reference

https://api.crossref.org/works/10.1002%2FADMA.201004255

Master-equation approach to the study of phase-change processes in data storage media.

21 January 2018

1 reference

https://api.crossref.org/works/10.1002%2FADMA.201004255

Near-Field Optics: Microscopy, Spectroscopy, and Surface Modification Beyond the Diffraction Limit

21 January 2018

1 reference

https://api.crossref.org/works/10.1002%2FADMA.201004255

Chemical vapor deposition of chalcogenide materials for phase-change memories

21 January 2018

1 reference

https://api.crossref.org/works/10.1002%2FADMA.201004255

Hot-Wire Chemical Vapor Deposition of Chalcogenide Materials for Phase Change Memory Applications

21 January 2018

1 reference

https://api.crossref.org/works/10.1002%2FADMA.201004255

Solution-phase deposition and nanopatterning of GeSbSe phase-change materials

21 January 2018

1 reference

https://api.crossref.org/works/10.1002%2FADMA.201004255

Synthesis and characterization of Ge2Sb2Te5 nanowires with memory switching effect.

21 January 2018

1 reference

https://api.crossref.org/works/10.1002%2FADMA.201004255

Synthesis and characterization of phase-change nanowires.

21 January 2018

1 reference

https://api.crossref.org/works/10.1002%2FADMA.201004255

Highly scalable non-volatile and ultra-low-power phase-change nanowire memory.

21 January 2018

1 reference

https://api.crossref.org/works/10.1002%2FADMA.201004255

Size-dependent surface-induced heterogeneous nucleation driven phase-change in Ge2Sb2Te5 nanowires

21 January 2018

1 reference

https://api.crossref.org/works/10.1002%2FADMA.201004255

Void formation induced electrical switching in phase-change nanowires

21 January 2018

1 reference

https://api.crossref.org/works/10.1002%2FADMA.201004255

Origin of the Optical Contrast in Phase-Change Materials

21 January 2018

1 reference

https://api.crossref.org/works/10.1002%2FADMA.201004255

Vibrational properties of hexagonal Ge2Sb2Te5from first principles

21 January 2018

1 reference

https://api.crossref.org/works/10.1002%2FADMA.201004255

Peierls distortion as a route to high thermoelectric performance in In4Se3-δ crystals

21 January 2018

1 reference

https://api.crossref.org/works/10.1002%2FADMA.201004255

21 January 2018

Identifiers

DOI

10.1002/ADMA.201004255

1 reference

29 July 2017

1 reference

PubMed ID

21469218