The influence of strong electron and hole doping on the Raman intensity of chemical vapor-deposition graphene (Q30990104)
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English | The influence of strong electron and hole doping on the Raman intensity of chemical vapor-deposition graphene |
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The influence of strong electron and hole doping on the Raman intensity of chemical vapor-deposition graphene (English)
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Mildred S Dresselhaus
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Jing Kong
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Hootan Farhat
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Ladislav Kavan
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Martin Kalbac
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Alfonso Reina-Cecco
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1 October 2010
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