Reversible metal-insulator transition in LaAlO3thin films mediated by intragap defects: An alternative mechanism for resistive switching (Q62576051)

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scholarly article in Physical Review B, vol. 84 no. 16, October 2011
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Reversible metal-insulator transition in LaAlO3thin films mediated by intragap defects: An alternative mechanism for resistive switching
scholarly article in Physical Review B, vol. 84 no. 16, October 2011

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    Reversible metal-insulator transition in LaAlO3thin films mediated by intragap defects: An alternative mechanism for resistive switching (English)
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    Z. Q. Liu
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    D. P. Leusink
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    W. M. Lü
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    X. Wang
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    X. P. Yang
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    K. Gopinadhan
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    Y. T. Lin
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    A. Annadi
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    Y. L. Zhao
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    A. Roy Barman
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    S. Dhar
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    Y. P. Feng
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    H. B. Su
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    G. Xiong
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    Ariando
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    7 October 2011
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    84
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    16
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