Robert H. Dennard (Q289023)
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American engineer and inventor
- Robert Heath Dennard
- Robert Dennard
Language | Label | Description | Also known as |
---|---|---|---|
English | Robert H. Dennard |
American engineer and inventor |
|
Statements
5 September 1932
2 references
Behavior of the ferroresonant series circuit containing a square-loop reactor (English)
1958
0 references
1988
For invention of the basic one-transistor dynamic memory cell used worldwide in virtually all modern computers. (English)
1990
Invention of the one-transistor dynamic memory cell which is the basis for the one-device DRAM (dynamic random access memory) memory chip used worldwide in computers and for his contribution to the scaling theory which has been widely used in the miniaturization of MOSFET (metal oxide semiconductor field-effect transistor) integrated circuits. (English)
2009
for his invention and contributions to the development of Dynamic Random Access Memory (DRAM), used universally in computers and other data processing and communication systems (English)
0 references
Identifiers
Robert H. Dennard
David C. Hayes
0 references
Sitelinks
Wikipedia(17 entries)
- arwiki روبرت دينارد
- azbwiki رابرت دنارد
- bnwiki রবার্ট ডেনার্ড
- dewiki Robert H. Dennard
- enwiki Robert H. Dennard
- eswiki Robert H. Dennard
- fawiki رابرت دنارد
- jawiki ロバート・デナード
- mgwiki Robert H. Dennard
- nlwiki Robert H. Dennard
- nowiki Robert Dennard
- ptwiki Robert Heath Dennard
- ruwiki Деннард, Роберт
- ukwiki Роберт Деннард
- warwiki Robert H. Dennard
- wuuwiki 罗伯特·丹纳德
- zhwiki 羅伯特·丹納德